Part Number Hot Search : 
PCD5013 3C8T6 12150 A56A1 SVC71012 GP2010 APTGF 00112
Product Description
Full Text Search
 

To Download TRA2525 Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
 TRA2525 MR3025 Medium-Current Silicon Rectifiers
250 Volts, 25 Amperes
Compact, highly efficient silicon rectifiers for medium-current applications requiring: * High Current Surge -- 400 Amperes @ TJ = 175C * Peak Performance @ Elevated Temperature -- 25 Amperes * Low Cost * Compact, Molded Package for Optimum Efficiency in a Small Case Configuration
Mechanical Characteristics http://onsemi.com
* Finish: All External Surfaces are Corrosion Resistant, and Contact * * * *
Areas are Readily Solderable Polarity: Indicated by Cathode Band Weight: 1.8 Grams (Approximately) Maximum Temperature for Soldering Purposes: 260C Marking: 2525 or MR3025
TRA2525 Symbol VR VRSM IO Value 250 310 25 Unit Volts Volts Amps MR3025
CASE 193
ORDERING INFORMATION
Device Package Button Button Shipping 5000/Box 5000/Box
MAXIMUM RATINGS
Rating DC Blocking Voltage Non-Repetitive Peak Reverse Voltage (Halfwave, Single Phase, 60 Hz) Average Forward Current (Single Phase, Resistive Load, TC = 150C) Non-Repetitive Peak Surge Current (Halfwave, Single Phase, 60 Hz) Operating Junction Temperature Range Storage Temperature Range
IFSM TJ Tstg
400 -65 to +175 -65 to +175
Amps C C
(c) Semiconductor Components Industries, LLC, 1999
1
December, 1999 - Rev. 0
Publication Order Number: TRA2525/D
TRA2525 MR3025
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case Symbol RJC Value 1.0 Unit C/W
ELECTRICAL CHARACTERISTICS
Characteristic Instantaneous Forward Voltage(1) (IF = 100 Amps, TC = 25C) Reverse Current(1) (VR = 250 V, TC = 25C) (VR = 250 V, TC = 100C) Forward Voltage Temperature Coefficient @ IF = 10 mA (1) Pulse Test: Pulse Width < 300 s, Duty Cycle < 2%. *Typical Symbol VF IR Min -- Max 1.18 Unit Volts A
VFTC
*2*
-- --
*2*
10 250
mV/C
http://onsemi.com
2
TRA2525 MR3025
IFSM, PEAK HALF WAVE CURRENT (A)
1400 1350 1300 1250 V F, INSTANTANEOUS FORWARD VOLTAGE (mV) 1200 1150 1100 PW = 300 ms TJ = 25C
1000 TJ = 25C
VRRM may be applied between each cycle of surge. The TJ noted is TJ prior to surge F = 60 Hz
1 Cycle TJ = 175C
100 1 10 NUMBER OF CYCLES 100
1050 Maximum
1000 950
Figure 2. Non-Repetitive Surge Current
0
900 850 800 750 700 650 600 1 10 100 200 IF, INSTANTANEOUS FORWARD CURRENT (A) -2.0 0.1 1 10 100 200 IF, INSTANTANEOUS FORWARD CURRENT (A) COEFFICIENT (mV/ C) Typical -0.5 Typical Range -1.0
-1.5
Figure 1. Forward Voltage
60 50 DC 40 30 20 10 0 120 130 140 150 160 170 180 TC, CASE TEMPERATURE (C) IFM/IFAV = p PF(AV), AVERAGE POWER DISSIPATION (W) IF(AV), AVERAGE FORWARD CURRENT (A) 50
Figure 3. VF Temperature Coefficient
40
IFM/IFAV = p DC
30
20
10 0 0 10 20 30 40 50 IF, AVERAGE FORWARD CURRENT (A)
Figure 4. Current Derating
Figure 5. Forward Power Dissipation
http://onsemi.com
3
TRA2525 MR3025
r(t), TRANSIENT THERMAL RESISTANCE 100
RqJC(t) = RqJC * r(t) Note 1 10-1
10-2 0.1 1 t, TIME (ms) 10 100 300
Figure 6. Thermal Response
NOTE 1 Ppk tp t1 C, CAPACITANCE (pF)
To determine maximum junction temperature of the diode in a given situation, the following procedure is recommended. The temperature of the case should be measured using a thermocouple placed on the case at the temperature reference point (see the outline drawing on page 1). The thermal mass connected to the case is normally large enough so that it will not significantly respond to heat surges generated in the diode as a result of pulse operation once steady state conditions are achieved. Using the measured value of TC, the junction temperature may be determined by: TJ = TC + DTJC Where DTJC is the increase in junction temperature above the case temperature, it may be determined by:
Ppk DUTY CYCLE, D = tp/t1 PEAK POWER, Ppk is peak of an equivalent square power pulse 1000
TJ = 25C
100
10 0.1 1 10 100 VR, REVERSE VOLTAGE (V)
DTJC = Ppk @ RqJC [D + (1 - D) @ r(t1 + tp) + r(tp) - r(t1)] where: r(t) = normalized value of transient thermal resistance at time, t, from Figure 6, i.e.:
r(t1 + tp) = normalized value of transient thermal resistance at time t1 + tp.
Figure 7. Typical Capacitance
TFR , FORWARD RECOVERY TIME (ms)
VF
TJ = 25C
TRR , REVERSE RECOVERY TIME (ms)
1
100 IF 0 IR IF = 1 A 10 IF = 10 A TRR TJ = 25C 0.25 IR
TFR
VFR
VFR = 1.0 V
VFR = 2.0 V 0.1 1 IF, FORWARD CURRENT (A) 10
1 0.1 1 10 IR/IF, RATIO OF REVERSE TO FORWARD CURRENT
Figure 8. Forward Recovery Time http://onsemi.com
4
Figure 9. Reverse Recovery Time
TRA2525 MR3025
, EFFICIENCY FACTOR (%)
50 sine wave input
square wave input
TJ = 25C 10
5 1 10 f, FREQUENCY (kHz) 100
Figure 10. Rectification Waveform Efficiency
RECTIFICATION EFFICIENCY NOTE
RS
RL
VO
Figure 11. Single Phase Half-Wave Rectifier Circuit
The rectification efficiency factor shown in Figure 10 was calculated using the formula:
V2o(dc) RL RL (1)
For a square wave input of amplitude Vm, the efficiency factor becomes:
V 2m 2R L . V 2m 100% RL
(dc) o + PP(rms) + V2o(rms) .100% + V2o V2)(dc)2o(dc) .100% V
(ac)
(square)
+
+ 50%
(3)
For a sine wave input Vm sin(wt) to the diode, assume lossless, the maximum theoretical efficiency factor becomes:
V2m p 2R L . V2m 100% 4R L
(sine)
+
+ 42 .100% + 40.6%
(2)
(a full wave circuit has twice these efficiencies) As the frequency of the input signal is increased, the reverse recovery time of the diode (Figure 9) becomes significant, resulting in an increase ac voltage component across RL which is opposite in polarity to the forward current, thereby reducing the value of the efficiency factor , as shown on Figure 10. It should be emphasized that Figure 10 shows waveform efficiency only; it does not provide a measure of diode losses. Data was obtained by measuring the ac component of VO with a true rms ac voltmeter and the dc component with a dc voltmeter. The data was used in Equation 1 to obtain points for Figure 10.
http://onsemi.com
5
TRA2525 MR3025
Assembly and Soldering Information MECHANICAL STRESS
There are two basic areas of consideration for successful implementation of button rectifiers: 1. Mounting and Handling 2. Soldering Each should be carefully examined before attempting a finished assembly or mounting operation.
Mounting and Handling
COMPRESSION
TORSION
The button rectifier lends itself to a multitude of assembly arrangements, but one key consideration must always be included: One Side of the Connections to the Button Must be Flexible! This stress relief to the button should also be chosen for maximum contact area to afford the best heat transfer -- but not at the expense of flexibility. For an annealed copper terminal a thickness of 0.015 is suggested.
Strain Relief Terminal for Button Rectifier Copper Terminal Button Base (Heat Sink Material)
TENSION
SHEAR
Exceeding these recommended maximums can result in electrical degradation of the device.
Soldering
The base heat sink may be of various materials whose shape and size are a function of the individual application and the heat transfer requirements.
Common Materials Advantages and Disadvantages
Steel Copper Aluminum
Low Cost: relatively low heat conductivity High Cost: high heat conductivity Medium Cost: medium heat conductivity. Relatively expensive to plate and not all platers can process aluminum.
Handling of the button during assembly must be relatively gentle to minimize sharp impact shocks and avoid nicking of the plastic. Improperly designed automatic handling equipment is the worst source of unnecessary shocks. Techniques for vacuum handling and spring loading should be investigated. The mechanical stress limits for the button diode are as follows: Compression Tension Torsion Shear 32 lbs. 32 lbs. 6-inch lbs. 55 lbs. 142.3 Newton 142.3 Newton 0.68 Newtons-meters 244.7 Newton
The button rectifier is basically a semiconductor chip bonded between two nickel-plated copper heat sinks with an encapsulating material of epoxy compound. The exposed metal areas are also tin plated to enhance solderability. In the soldering process it is important that the temperature not exceed 260C if device damage is to be avoided. Various solder alloys can be used for this operation but two types are recommended for best results: 1. 95% Sn, 5% Sb; melting point 237C 2. 96.5% tin, 3.5% silver; melting point 221C 3. 63% tin, 37% lead; melting point 183C Solder is available as preforms or paste. The paste contains both the metal and flux and can be dispensed rapidly. The solder preform requires the application of a flux to assure good wetting of the solder. The type of flux used depends upon the degree of cleaning to be accomplished and is a function of the metal involved. These fluxes range from a mild rosin to a strong acid; e.g., Nickel plating oxides are best removed by an acid base flux while an activated rosin flux may be sufficient for tin plated parts. Since the button is relatively lightweight, there is a tendency for it to float when the solder becomes liquid. To prevent bad joints and misalignment, it is suggested that a weighting or spring loaded fixture be employed. It is also important that severe thermal shock (either heating or cooling) be avoided as it may lead to damage of the die or encapsulant of the part.
http://onsemi.com
6
TRA2525 MR3025
Button holding fixtures for use during soldering may be of various materials. Stainless steel has a longer use life while black anodized aluminum is less expensive and will limit heat reflection and enhance absorption. The assembly volume will influence the choice of materials. Fixture dimension tolerances for locating the button must allow for expansion during soldering as well as allowing for button clearance.
Heating Techniques
The following four heating methods have their advantages and disadvantages depending on volume of buttons to be soldered. 1. Belt furnaces readily handle large or small volumes and are adaptable to establishment of "on-line'' assembly since a variable belt speed sets the run rate. Individual furnace zone controls make excellent temperature control possible. 2. Flame Soldering involves the directing of natural gas flame jets at the base of a heatsink as the heatsink is indexed to various loading-heating- cooling-unloading positions. This is the most economical labor method of soldering large volumes. Flame soldering offers good temperature
control but requires sophisticated temperature monitoring systems such as infrared. 3. Ovens are good for batch soldering and are production limited. There are handling problems because of slow cooling. Response time is load dependent, being a function of the watt rating of the oven and the mass of parts. Large ovens may not give an acceptable temperature gradient. Capital cost is low compared to belt furnaces and flame soldering. 4. Hot Plates are good for soldering small quantities of prototype devices. Temperature control is fair with overshoot common because of the exposed heating surface. Solder flow and positioning can be corrected during soldering since the assembly is exposed. Investment cost is very low. Regardless of the heating method used, a soldering profile giving the time-temperature relationship of the particular method must be determined to assure proper soldering. Profiling must be performed on a scheduled basis to minimize poor soldering. The time-temperature relationship will change depending on the heating method used.
http://onsemi.com
7
TRA2525 MR3025
PACKAGE DIMENSIONS
CASE 193-04 ISSUE J
A
DIM A B D F M
MILLIMETERS MIN MAX 8.43 8.69 4.19 4.45 5.54 5.64 5.94 6.25 5_NOM
INCHES MIN MAX 0.332 0.342 0.165 0.175 0.218 0.222 0.234 0.246 5_NOM
M D B F
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
North America Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada EUROPE: LDC for ON Semiconductor - European Support German Phone: (+1) 303-308-7140 (M-F 2:30pm to 5:00pm Munich Time) Email: ONlit-german@hibbertco.com French Phone: (+1) 303-308-7141 (M-F 2:30pm to 5:00pm Toulouse Time) Email: ONlit-french@hibbertco.com English Phone: (+1) 303-308-7142 (M-F 1:30pm to 5:00pm UK Time) Email: ONlit@hibbertco.com ASIA/PACIFIC: LDC for ON Semiconductor - Asia Support Phone: 303-675-2121 (Tue-Fri 9:00am to 1:00pm, Hong Kong Time) Toll Free from Hong Kong 800-4422-3781 Email: ONlit-asia@hibbertco.com JAPAN: ON Semiconductor, Japan Customer Focus Center 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-8549 Phone: 81-3-5487-8345 Email: r14153@onsemi.com Fax Response Line: 303-675-2167 800-344-3810 Toll Free USA/Canada ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative.
http://onsemi.com
8
TRA2525/D


▲Up To Search▲   

 
Price & Availability of TRA2525

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X